Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence

V. Khanin; I. Venevtsev; K. Chernenko; P. Rodnyi; T. van Swieten; S. Spoor; J. Boerekamp; H. Wieczorek; I. Vrubel; A. Meijerink; C. Ronda

doi:10.1016/j.jlumin.2019.03.013

Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence

V. Khanin, I. Venevtsev, K. Chernenko, P. Rodnyi, T. van Swieten, S. Spoor, J. Boerekamp, H. Wieczorek, I. Vrubel, A. Meijerink, C. Ronda

Philips Research

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The shift of the conduction band (CB) edge for thirty different (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu 1 Gd 2 Ga 3 Al 2 O 12 :Ce ceramics. The shift of Yb-related peak positions (in temperature and trap depth) with composition modification was investigated as well. In Gd-containing (Lu,Gd) 3 (Ga,Al) 5 O 12 compositions a non-monotonous shift of the CB edge with increasing Ga content has been affirmed. The difference between thermal trap depths evaluated from our TSL experiments and optical trap depths obtained from the literature was explained by the role of lattice relaxation.

Original language	English
Pages (from-to)	48-53
Number of pages	6
Journal	Journal of Luminescence
Volume	211
DOIs	https://doi.org/10.1016/j.jlumin.2019.03.013
Publication status	Published - 8 Mar 2019

Keywords

Complex garnets
Impurity-related traps
Thermal trap depth
Thermally stimulated luminescence

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Variation of the conductionFinal published version, 858 KBLicence: Taverne

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@article{817697b76d514502bb8d436191ff05b5,

title = "Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence",

abstract = "The shift of the conduction band (CB) edge for thirty different (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu 1 Gd 2 Ga 3 Al 2 O 12 :Ce ceramics. The shift of Yb-related peak positions (in temperature and trap depth) with composition modification was investigated as well. In Gd-containing (Lu,Gd) 3 (Ga,Al) 5 O 12 compositions a non-monotonous shift of the CB edge with increasing Ga content has been affirmed. The difference between thermal trap depths evaluated from our TSL experiments and optical trap depths obtained from the literature was explained by the role of lattice relaxation.",

keywords = "Complex garnets, Impurity-related traps, Thermal trap depth, Thermally stimulated luminescence",

author = "V. Khanin and I. Venevtsev and K. Chernenko and P. Rodnyi and {van Swieten}, T. and S. Spoor and J. Boerekamp and H. Wieczorek and I. Vrubel and A. Meijerink and C. Ronda",

year = "2019",

month = mar,

day = "8",

doi = "10.1016/j.jlumin.2019.03.013",

language = "English",

volume = "211",

pages = "48--53",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

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TY - JOUR

T1 - Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence

AU - Khanin, V.

AU - Venevtsev, I.

AU - Chernenko, K.

AU - Rodnyi, P.

AU - van Swieten, T.

AU - Spoor, S.

AU - Boerekamp, J.

AU - Wieczorek, H.

AU - Vrubel, I.

AU - Meijerink, A.

AU - Ronda, C.

PY - 2019/3/8

Y1 - 2019/3/8

N2 - The shift of the conduction band (CB) edge for thirty different (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu 1 Gd 2 Ga 3 Al 2 O 12 :Ce ceramics. The shift of Yb-related peak positions (in temperature and trap depth) with composition modification was investigated as well. In Gd-containing (Lu,Gd) 3 (Ga,Al) 5 O 12 compositions a non-monotonous shift of the CB edge with increasing Ga content has been affirmed. The difference between thermal trap depths evaluated from our TSL experiments and optical trap depths obtained from the literature was explained by the role of lattice relaxation.

AB - The shift of the conduction band (CB) edge for thirty different (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu 1 Gd 2 Ga 3 Al 2 O 12 :Ce ceramics. The shift of Yb-related peak positions (in temperature and trap depth) with composition modification was investigated as well. In Gd-containing (Lu,Gd) 3 (Ga,Al) 5 O 12 compositions a non-monotonous shift of the CB edge with increasing Ga content has been affirmed. The difference between thermal trap depths evaluated from our TSL experiments and optical trap depths obtained from the literature was explained by the role of lattice relaxation.

KW - Complex garnets

KW - Impurity-related traps

KW - Thermal trap depth

KW - Thermally stimulated luminescence

U2 - 10.1016/j.jlumin.2019.03.013

DO - 10.1016/j.jlumin.2019.03.013

M3 - Article

SN - 0022-2313

VL - 211

SP - 48

EP - 53

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence

Abstract

Keywords

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