Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayer

David Saleta Reig, Sebin Varghese, Roberta Farris, Alexander Block, Jake D Mehew, Olle Hellman, Pawełl Woźniak, Marianna Sledzinska, Alexandros El Sachat, Emigdio Chávez-Ángel, Sergio O Valenzuela, Niek F van Hulst, Pablo Ordejón, Zeila Zanolli, Clivia M Sotomayor Torres, Matthieu J Verstraete, Klaas-Jan Tielrooij

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Understanding heat flow in layered transition metal dichalcogenide (TMD) crystals is crucial for applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood, in particular how transport is affected by material thickness and the material's environment. This combined experimental–theoretical study establishes a unifying physical picture of the intrinsic lattice thermal conductivity of the representative TMD MoSe2. Thermal conductivity measurements using Raman thermometry on a large set of clean, crystalline, suspended crystals with systematically varied thickness are combined with ab initio simulations with phonons at finite temperature. The results show that phonon dispersions and lifetimes change strongly with thickness, yet the thinnest TMD films exhibit an in-plane thermal conductivity that is only marginally smaller than that of bulk crystals. This is the result of compensating phonon contributions, in particular heat-carrying modes around ≈0.1 THz in (sub)nanometer thin films, with a surprisingly long mean free path of several micrometers. This behavior arises directly from the layered nature of the material. Furthermore, out-of-plane heat dissipation to air molecules is remarkably efficient, in particular for the thinnest crystals, increasing the apparent thermal conductivity of monolayer MoSe2 by an order of magnitude. These results are crucial for the design of (flexible) TMD-based (opto-)electronic applications.

Original languageEnglish
Article number2108352
Pages (from-to)1-9
JournalAdvanced Materials
Volume34
Issue number10
Early online date4 Jan 2022
DOIs
Publication statusPublished - 10 Mar 2022

Keywords

  • 2D materials
  • Raman thermometry
  • ab initio
  • heat transport
  • transition metal dichalcogenides

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