Transient photoconductivity study of the distribution of gap states in 100°C VHF-deposited hydrogenated silicon layers

M. Brinza, G.J. Adriaenssens, J.K. Rath, R.E.I. Schropp

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The energy distribution of gap states has been examined by means of transient photocurrent measurements in a series of 100°C VHF-deposited Si:H samples that spans the amorphous to microcrystalline transition. The ?amorphous? distribution, consisting of a continuous background and a prominent dangling-bond-induced peak, remains largely intact across the transition. The transport path located at the conduction band edge in a-Si:H, some 0.63 eV above the dangling bond D- energy, moves down to ~0.55 eV above the corresponding D- level in the microcrystalline samples.
Original languageUndefined/Unknown
Title of host publicationAmorphous and polycrystalline thin-film silicon science and technology--2008 : symposium held March 25-28, 2008, San Francisco, California, U.S.A
EditorsArokia Nathan, Andrew Flewitt, Jack Hou, Seiichi Miyazaki
Place of PublicationWarrendale, Pa
PublisherMaterials Research Society
PagesA07-06-A07-10
Number of pages5
Publication statusPublished - 25 Mar 2008

Bibliographical note

Symposium A

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