Abstract
The energy distribution of gap states has been examined by means of transient photocurrent measurements in a series of 100°C VHF-deposited Si:H samples that spans the amorphous to microcrystalline transition. The ?amorphous? distribution, consisting of a continuous background and a prominent dangling-bond-induced peak, remains largely intact across the transition. The transport path located at the conduction band edge in a-Si:H, some 0.63 eV above the dangling bond D- energy, moves down to ~0.55 eV above the corresponding D- level in the microcrystalline samples.
Original language | Undefined/Unknown |
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Title of host publication | Amorphous and polycrystalline thin-film silicon science and technology--2008 : symposium held March 25-28, 2008, San Francisco, California, U.S.A |
Editors | Arokia Nathan, Andrew Flewitt, Jack Hou, Seiichi Miyazaki |
Place of Publication | Warrendale, Pa |
Publisher | Materials Research Society |
Pages | A07-06-A07-10 |
Number of pages | 5 |
Publication status | Published - 25 Mar 2008 |