Toward an Accurate Tight-Binding Model of Graphene's Electronic Properties under Strain

Andrés R. Botello-Méndez*, Juan Carlos Obeso-Jureidini, Gerardo G. Naumis

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

In this work, the effect of strain on the electronic structure of graphene modeled by several single-orbital third-nearest-neighbors tight-binding models is examined. The Hasegawa et al. conditions for gap opening in graphene under uniform tensile strain are revised to include up to third-nearest-neighbor interactions using parameters available in the literature. A comparison with ab initio density functional theory (DFT) calculations shows discrepancies. Based on the DFT calculations and through the projection of the Kohn-Sham wavefunctions into localized orbitals, the disagreement is explained by an angular dependence of the second- and third-nearest-neighbors tight-binding parameters.

Original languageEnglish
Pages (from-to)15753-15760
Number of pages8
JournalJournal of Physical Chemistry C
Volume122
Issue number27
DOIs
Publication statusPublished - 12 Jul 2018
Externally publishedYes

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