Abstract
We show that curvature-induced inhomogeneous strain distributions in nanoscale buckled semiconducting ribbons lead to the existence of end states which are topologically protected by inversion symmetry. These end-state doublets, corresponding to the so-called Maue-Shockley states, are robust against weak disorder. By identifying and calculating the corresponding topological invariants, we further show that a buckled semiconducting ribbon undergoes topological phase transitions between trivial and non-trivial insulating phases by varying its real space geometry.
Original language | English |
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Article number | 195420 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 93 |
Issue number | 19 |
DOIs | |
Publication status | Published - 16 May 2016 |