Topological end states due to inhomogeneous strains in wrinkled semiconducting ribbons

Sudhakar Pandey, Carmine Ortix

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We show that curvature-induced inhomogeneous strain distributions in nanoscale buckled semiconducting ribbons lead to the existence of end states which are topologically protected by inversion symmetry. These end-state doublets, corresponding to the so-called Maue-Shockley states, are robust against weak disorder. By identifying and calculating the corresponding topological invariants, we further show that a buckled semiconducting ribbon undergoes topological phase transitions between trivial and non-trivial insulating phases by varying its real space geometry.
Original languageEnglish
Article number195420
Number of pages5
JournalPhysical Review B
Volume93
Issue number19
DOIs
Publication statusPublished - 16 May 2016

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