Abstract
A cyclic-operation low-pressure MOCVD reactor has been developed in
which a multilayer device structure can be grown in a succession of a
few thousands of "growth cycles". In each cycle, of typical duration
˜1 s, growth proceeds from a low-pressure (1 mbar) mixture which
during the reaction is immobile with respect to the substrates. In one
cycle 1 to 30 atomic layers can be deposited. Expected advantages are:
(a) improved layer uniformity in thickness and composition; (b) highly
efficient use of metalorganics; (c) ideally sharp transitions; (d)
straightforward scale-up possibility to large reactor volume.
Original language | English |
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Pages (from-to) | 201-206 |
Journal | Journal of Crystal Growth |
Volume | 93 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Dec 1988 |