Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

W. G. J. H. M. van Sark; G. J. H. M. Janssen; M. H. J. M. de Croon; X. Tang; L. J. Giling; W. M. Arnold Bik; C. P. M. Dunselman; F. H. P. M. Habraken; W. F. van der Weg

doi:10.1063/1.341462

Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

W. G. J. H. M. van Sark
, G. J. H. M. Janssen
, M. H. J. M. de Croon
, X. Tang
, L. J. Giling
, W. M. Arnold Bik
, C. P. M. Dunselman
, F. H. P. M. Habraken
, W. F. van der Weg

Energy and Resources

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.

Original language	English
Pages (from-to)	195-199
Journal	Journal of Applied Physics
Volume	64
DOIs	https://doi.org/10.1063/1.341462
Publication status	Published - 1 Jul 1988

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10.1063/1.341462

http://adsabs.harvard.edu/abs/1988JAP....64..195V

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@article{68572625141f44398f4282a829e3eaab,

title = "Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy",

abstract = "The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.",

author = "\{van Sark\}, \{W. G. J. H. M.\} and Janssen, \{G. J. H. M.\} and \{de Croon\}, \{M. H. J. M.\} and X. Tang and Giling, \{L. J.\} and Bik, \{W. M. Arnold\} and Dunselman, \{C. P. M.\} and Habraken, \{F. H. P. M.\} and \{van der Weg\}, \{W. F.\}",

year = "1988",

month = jul,

day = "1",

doi = "10.1063/1.341462",

language = "English",

volume = "64",

pages = "195--199",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

AU - van Sark, W. G. J. H. M.

AU - Janssen, G. J. H. M.

AU - de Croon, M. H. J. M.

AU - Tang, X.

AU - Giling, L. J.

AU - Bik, W. M. Arnold

AU - Dunselman, C. P. M.

AU - Habraken, F. H. P. M.

AU - van der Weg, W. F.

PY - 1988/7/1

Y1 - 1988/7/1

N2 - The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.

AB - The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.

U2 - 10.1063/1.341462

DO - 10.1063/1.341462

M3 - Article

SN - 0021-8979

VL - 64

SP - 195

EP - 199

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

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