Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

W. G. J. H. M. van Sark; G. J. H. M. Janssen; M. H. J. M. de Croon; X. Tang; L. J. Giling; W. M. Arnold Bik; C. P. M. Dunselman; F. H. P. M. Habraken; W. F. van der Weg

doi:10.1063/1.341462

Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

W. G. J. H. M. van Sark, G. J. H. M. Janssen, M. H. J. M. de Croon, X. Tang, L. J. Giling, W. M. Arnold Bik, C. P. M. Dunselman, F. H. P. M. Habraken, W. F. van der Weg

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Abstract

The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.

Original language	English
Pages (from-to)	195-199
Journal	Journal of Applied Physics
Volume	64
DOIs	https://doi.org/10.1063/1.341462
Publication status	Published - 1 Jul 1988

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http://adsabs.harvard.edu/abs/1988JAP....64..195V

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@article{68572625141f44398f4282a829e3eaab,

title = "Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy",

abstract = "The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.",

author = "{van Sark}, {W. G. J. H. M.} and Janssen, {G. J. H. M.} and {de Croon}, {M. H. J. M.} and X. Tang and Giling, {L. J.} and Bik, {W. M. Arnold} and Dunselman, {C. P. M.} and Habraken, {F. H. P. M.} and {van der Weg}, {W. F.}",

year = "1988",

month = jul,

day = "1",

doi = "10.1063/1.341462",

language = "English",

volume = "64",

pages = "195--199",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

AU - van Sark, W. G. J. H. M.

AU - Janssen, G. J. H. M.

AU - de Croon, M. H. J. M.

AU - Tang, X.

AU - Giling, L. J.

AU - Bik, W. M. Arnold

AU - Dunselman, C. P. M.

AU - Habraken, F. H. P. M.

AU - van der Weg, W. F.

PY - 1988/7/1

Y1 - 1988/7/1

N2 - The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.

AB - The temperature-dependent behavior of the solid composition xs of AlxGa1-xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.

U2 - 10.1063/1.341462

DO - 10.1063/1.341462

M3 - Article

SN - 0021-8979

VL - 64

SP - 195

EP - 199

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Temperature-dependent aluminum incorporation in AlxGa1 - xAs layers grown by metalorganic vapor phase epitaxy

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