Switching CdSe quantum dot luminescence with a-Si:H

M. Di Vece, S. Duren, D.J. van den Heuvel, D. Mitoraj, Y Kuang, H.C. Gerritsen, R.E.I. Schropp

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.
Original languageEnglish
JournalNanotechnology
Volume24
Issue number31
DOIs
Publication statusPublished - 2013

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