Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS

B. Künstler-Hourriez; B. Erné; F. Lefévre; D. Lorans; B. Canava; M. Herlem; A. Etcheberry

doi:10.1051/jp4:2006132029

Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS

B. Künstler-Hourriez^*, B. Erné, F. Lefévre, D. Lorans, B. Canava, M. Herlem, A. Etcheberry

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The surface chemistry of InSb was modified by anodic treatment at different pH. Using a coupled approach based on electrochemical and surface analysis techniques we determined different chemical configurations for the oxidized InSb surface. Sb-rich oxidized surfaces or stoichiometric ones have been obtained.

Original language	English
Title of host publication	Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages	147-151
Number of pages	5
DOIs	https://doi.org/10.1051/jp4:2006132029
Publication status	Published - Mar 2006
Externally published	Yes
Event	ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France Duration: 3 Jul 2005 → 8 Jul 2005

Publication series

Name	Journal De Physique. IV : JP
Volume	132
ISSN (Print)	1155-4339
ISSN (Electronic)	1764-7177

Conference

Conference	ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Country/Territory	France
City	Aix-en-Provence
Period	3/07/05 → 8/07/05

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10.1051/jp4:2006132029

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Künstler-Hourriez, B., Erné, B., Lefévre, F., Lorans, D., Canava, B., Herlem, M., & Etcheberry, A. (2006). Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS. In Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces (pp. 147-151). (Journal De Physique. IV : JP; Vol. 132). https://doi.org/10.1051/jp4:2006132029

@inproceedings{c469ebfb7f964131a50261013aed318b,

title = "Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS",

abstract = "The surface chemistry of InSb was modified by anodic treatment at different pH. Using a coupled approach based on electrochemical and surface analysis techniques we determined different chemical configurations for the oxidized InSb surface. Sb-rich oxidized surfaces or stoichiometric ones have been obtained.",

author = "B. K{\"u}nstler-Hourriez and B. Ern{\'e} and F. Lef{\'e}vre and D. Lorans and B. Canava and M. Herlem and A. Etcheberry",

year = "2006",

month = mar,

doi = "10.1051/jp4:2006132029",

language = "English",

isbn = "2868839185",

series = "Journal De Physique. IV : JP",

pages = "147--151",

booktitle = "Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces",

note = "ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces ; Conference date: 03-07-2005 Through 08-07-2005",

}

Künstler-Hourriez, B, Erné, B, Lefévre, F, Lorans, D, Canava, B, Herlem, M & Etcheberry, A 2006, Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS. in Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces. Journal De Physique. IV : JP, vol. 132, pp. 147-151, ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces, Aix-en-Provence, France, 3/07/05. https://doi.org/10.1051/jp4:2006132029

Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS. / Künstler-Hourriez, B.; Erné, B.; Lefévre, F. et al.
Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces. 2006. p. 147-151 (Journal De Physique. IV : JP; Vol. 132).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS

AU - Künstler-Hourriez, B.

AU - Erné, B.

AU - Lefévre, F.

AU - Lorans, D.

AU - Canava, B.

AU - Herlem, M.

AU - Etcheberry, A.

PY - 2006/3

Y1 - 2006/3

N2 - The surface chemistry of InSb was modified by anodic treatment at different pH. Using a coupled approach based on electrochemical and surface analysis techniques we determined different chemical configurations for the oxidized InSb surface. Sb-rich oxidized surfaces or stoichiometric ones have been obtained.

AB - The surface chemistry of InSb was modified by anodic treatment at different pH. Using a coupled approach based on electrochemical and surface analysis techniques we determined different chemical configurations for the oxidized InSb surface. Sb-rich oxidized surfaces or stoichiometric ones have been obtained.

UR - http://www.scopus.com/inward/record.url?scp=33744923678&partnerID=8YFLogxK

U2 - 10.1051/jp4:2006132029

DO - 10.1051/jp4:2006132029

M3 - Conference contribution

AN - SCOPUS:33744923678

SN - 2868839185

SN - 9782868839183

T3 - Journal De Physique. IV : JP

SP - 147

EP - 151

BT - Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces

T2 - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces

Y2 - 3 July 2005 through 8 July 2005

ER -

Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS

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