Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

Florian Meirer; Evgeny Demenev; Damiano Giubertoni; Lia Vanzetti; Salvatore Gennaro; Michele Fedrizzi; Giancarlo Pepponi; Georg Steinhauser; Vinayak Vishwanath; Majeed Foad; Massimo Bersani

doi:10.1002/pssc.201300160

Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

Florian Meirer^*, Evgeny Demenev, Damiano Giubertoni, Lia Vanzetti, Salvatore Gennaro, Michele Fedrizzi, Giancarlo Pepponi, Georg Steinhauser, Vinayak Vishwanath, Majeed Foad, Massimo Bersani

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation and deposition (PIIID) using a non-pulsed plasma source was studied over a time period of more than one year. The study focused on the effect of arsenolite micro-crystal formation, enhanced oxidation, and the significant As dose loss from as implanted samples at room temperature. The study was carried out combining analytical evidence from SIMS, XPS, INAA, SEM, and optical microscopy suggesting a two stage process of As dose loss, the first implying arsenolite crystal growth and the second an out-diffusion. In fact, comparison of samples fabricated using different PIIID parameters showed that crystal growth seems not to be the only process responsible for dose loss.

Original language	English
Pages (from-to)	28-31
Number of pages	4
Journal	Physica Status Solidi. C, Current Topics in Solid State Physics
Volume	11
Issue number	1
DOIs	https://doi.org/10.1002/pssc.201300160
Publication status	Published - 1 Jan 2014

Keywords

Arsenic implants
Plasma immersion ion implantation
Silicon
Surface evolution

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10.1002/pssc.201300160

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Meirer, F., Demenev, E., Giubertoni, D., Vanzetti, L., Gennaro, S., Fedrizzi, M., Pepponi, G., Steinhauser, G., Vishwanath, V., Foad, M., & Bersani, M. (2014). Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study. Physica Status Solidi. C, Current Topics in Solid State Physics, 11(1), 28-31. https://doi.org/10.1002/pssc.201300160

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title = "Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study",

abstract = "The evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation and deposition (PIIID) using a non-pulsed plasma source was studied over a time period of more than one year. The study focused on the effect of arsenolite micro-crystal formation, enhanced oxidation, and the significant As dose loss from as implanted samples at room temperature. The study was carried out combining analytical evidence from SIMS, XPS, INAA, SEM, and optical microscopy suggesting a two stage process of As dose loss, the first implying arsenolite crystal growth and the second an out-diffusion. In fact, comparison of samples fabricated using different PIIID parameters showed that crystal growth seems not to be the only process responsible for dose loss.",

keywords = "Arsenic implants, Plasma immersion ion implantation, Silicon, Surface evolution",

author = "Florian Meirer and Evgeny Demenev and Damiano Giubertoni and Lia Vanzetti and Salvatore Gennaro and Michele Fedrizzi and Giancarlo Pepponi and Georg Steinhauser and Vinayak Vishwanath and Majeed Foad and Massimo Bersani",

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Meirer, F, Demenev, E, Giubertoni, D, Vanzetti, L, Gennaro, S, Fedrizzi, M, Pepponi, G, Steinhauser, G, Vishwanath, V, Foad, M & Bersani, M 2014, 'Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study', Physica Status Solidi. C, Current Topics in Solid State Physics, vol. 11, no. 1, pp. 28-31. https://doi.org/10.1002/pssc.201300160

Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study. / Meirer, Florian; Demenev, Evgeny; Giubertoni, Damiano et al.
In: Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, No. 1, 01.01.2014, p. 28-31.

Research output: Contribution to journal › Article › Academic › peer-review

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T1 - Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

AU - Meirer, Florian

AU - Demenev, Evgeny

AU - Giubertoni, Damiano

AU - Vanzetti, Lia

AU - Gennaro, Salvatore

AU - Fedrizzi, Michele

AU - Pepponi, Giancarlo

AU - Steinhauser, Georg

AU - Vishwanath, Vinayak

AU - Foad, Majeed

AU - Bersani, Massimo

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation and deposition (PIIID) using a non-pulsed plasma source was studied over a time period of more than one year. The study focused on the effect of arsenolite micro-crystal formation, enhanced oxidation, and the significant As dose loss from as implanted samples at room temperature. The study was carried out combining analytical evidence from SIMS, XPS, INAA, SEM, and optical microscopy suggesting a two stage process of As dose loss, the first implying arsenolite crystal growth and the second an out-diffusion. In fact, comparison of samples fabricated using different PIIID parameters showed that crystal growth seems not to be the only process responsible for dose loss.

AB - The evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation and deposition (PIIID) using a non-pulsed plasma source was studied over a time period of more than one year. The study focused on the effect of arsenolite micro-crystal formation, enhanced oxidation, and the significant As dose loss from as implanted samples at room temperature. The study was carried out combining analytical evidence from SIMS, XPS, INAA, SEM, and optical microscopy suggesting a two stage process of As dose loss, the first implying arsenolite crystal growth and the second an out-diffusion. In fact, comparison of samples fabricated using different PIIID parameters showed that crystal growth seems not to be the only process responsible for dose loss.

KW - Arsenic implants

KW - Plasma immersion ion implantation

KW - Silicon

KW - Surface evolution

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Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

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