Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Andrew Ross; Romain Lebrun; Camilo Ulloa; Daniel A. Grave; Asaf Kay; Lorenzo Baldrati; Florian Kronast; Sergio Valencia; Avner Rothschild; Mathias Klaeui

doi:10.1103/PhysRevB.102.094415

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Andrew Ross, Romain Lebrun, Camilo Ulloa, Daniel A. Grave, Asaf Kay, Lorenzo Baldrati, Florian Kronast, Sergio Valencia, Avner Rothschild, Mathias Klaeui

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite
(α−Fe2O3)
and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic-based structures. To understand the observed complex SMR field dependence, we analyze the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

Original language	English
Article number	094415
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B
Volume	102
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevB.102.094415
Publication status	Published - 10 Sept 2020

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10.1103/PhysRevB.102.094415

PhysRevB.102.094415Final published version, 435 KBLicence: Unspecified

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@article{45a31aa4bd6d45ecafb2edc8d5555e8a,

title = "Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films",

abstract = "Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α−Fe2O3)and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic-based structures. To understand the observed complex SMR field dependence, we analyze the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.",

author = "Andrew Ross and Romain Lebrun and Camilo Ulloa and Grave, {Daniel A.} and Asaf Kay and Lorenzo Baldrati and Florian Kronast and Sergio Valencia and Avner Rothschild and Mathias Klaeui",

year = "2020",

month = sep,

day = "10",

doi = "10.1103/PhysRevB.102.094415",

language = "English",

volume = "102",

pages = "1--6",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

AU - Ross, Andrew

AU - Lebrun, Romain

AU - Ulloa, Camilo

AU - Grave, Daniel A.

AU - Kay, Asaf

AU - Baldrati, Lorenzo

AU - Kronast, Florian

AU - Valencia, Sergio

AU - Rothschild, Avner

AU - Klaeui, Mathias

PY - 2020/9/10

Y1 - 2020/9/10

N2 - Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α−Fe2O3)and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic-based structures. To understand the observed complex SMR field dependence, we analyze the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

AB - Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α−Fe2O3)and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic-based structures. To understand the observed complex SMR field dependence, we analyze the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

U2 - 10.1103/PhysRevB.102.094415

DO - 10.1103/PhysRevB.102.094415

M3 - Article

SN - 2469-9950

VL - 102

SP - 1

EP - 6

JO - Physical Review B

JF - Physical Review B

IS - 9

M1 - 094415

ER -

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

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