Abstract
Hydrogenated amorphous silicon (a-Si:H) films were grown in an rf-plasma
deposition system on various substrates. The thickness of the films
ranged from 11 to 579 nm. The structural properties of the films were
studied by means of ex situ Raman spectroscopy. The width of the
transverse-optic peak in the Raman spectrum was used as a measure for
the amount of bond-angle variation in the films. In contrast to earlier
reports, it is found that bond-angle variation in
glow-discharge-deposited a-Si:H does not depend on the film thickness,
nor on the type of substrate material.
Original language | English |
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Pages (from-to) | 1964-1967 |
Journal | Journal of Applied Physics |
Volume | 78 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Aug 1995 |