Structural order in thin a-Si:H films

A. J. M. Berntsen, W. G. J. H. M. van Sark, W. F. van der Weg

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Hydrogenated amorphous silicon (a-Si:H) films were grown in an rf-plasma deposition system on various substrates. The thickness of the films ranged from 11 to 579 nm. The structural properties of the films were studied by means of ex situ Raman spectroscopy. The width of the transverse-optic peak in the Raman spectrum was used as a measure for the amount of bond-angle variation in the films. In contrast to earlier reports, it is found that bond-angle variation in glow-discharge-deposited a-Si:H does not depend on the film thickness, nor on the type of substrate material.
Original languageEnglish
Pages (from-to)1964-1967
JournalJournal of Applied Physics
Volume78
Issue number3
DOIs
Publication statusPublished - 1 Aug 1995

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