State of the art of InP and GaAs quantum cascade lasers

G. Scamarcio; V. Spagnolo; M. Troccoli; Z. Zanolli; F. Rizzi; M. Vitiello; D. Marano; A. Sabato; I. M. Catalano; M. Sibilano; P. Calabrese

doi:10.1109/ICIPRM.2002.1014626

State of the art of InP and GaAs quantum cascade lasers

G. Scamarcio
, V. Spagnolo
, M. Troccoli
, Z. Zanolli
, F. Rizzi
, M. Vitiello
, D. Marano
, A. Sabato
, I. M. Catalano
, M. Sibilano
, P. Calabrese

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.

Original language	English
Pages (from-to)	731-734
Number of pages	4
Journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2002.1014626
Publication status	Published - 2002
Externally published	Yes

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10.1109/ICIPRM.2002.1014626

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title = "State of the art of InP and GaAs quantum cascade lasers",

abstract = "The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.",

author = "G. Scamarcio and V. Spagnolo and M. Troccoli and Z. Zanolli and F. Rizzi and M. Vitiello and D. Marano and A. Sabato and Catalano, \{I. M.\} and M. Sibilano and P. Calabrese",

year = "2002",

doi = "10.1109/ICIPRM.2002.1014626",

language = "English",

pages = "731--734",

journal = "Conference Proceedings-International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

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T1 - State of the art of InP and GaAs quantum cascade lasers

AU - Scamarcio, G.

AU - Spagnolo, V.

AU - Troccoli, M.

AU - Zanolli, Z.

AU - Rizzi, F.

AU - Vitiello, M.

AU - Marano, D.

AU - Sabato, A.

AU - Catalano, I. M.

AU - Sibilano, M.

AU - Calabrese, P.

PY - 2002

Y1 - 2002

N2 - The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.

AB - The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.

UR - https://www.scopus.com/pages/publications/0036045752

U2 - 10.1109/ICIPRM.2002.1014626

DO - 10.1109/ICIPRM.2002.1014626

M3 - Article

AN - SCOPUS:0036045752

SN - 1092-8669

SP - 731

EP - 734

JO - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

ER -

State of the art of InP and GaAs quantum cascade lasers

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