State of the art of InP and GaAs quantum cascade lasers

G. Scamarcio; V. Spagnolo; M. Troccoli; Z. Zanolli; F. Rizzi; M. Vitiello; D. Marano; A. Sabato; I. M. Catalano; M. Sibilano; P. Calabrese

doi:10.1109/ICIPRM.2002.1014626

State of the art of InP and GaAs quantum cascade lasers

G. Scamarcio, V. Spagnolo, M. Troccoli, Z. Zanolli, F. Rizzi, M. Vitiello, D. Marano, A. Sabato, I. M. Catalano, M. Sibilano, P. Calabrese

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.

Original language	English
Pages (from-to)	731-734
Number of pages	4
Journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2002.1014626
Publication status	Published - 2002
Externally published	Yes

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abstract = "The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.",

author = "G. Scamarcio and V. Spagnolo and M. Troccoli and Z. Zanolli and F. Rizzi and M. Vitiello and D. Marano and A. Sabato and Catalano, {I. M.} and M. Sibilano and P. Calabrese",

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doi = "10.1109/ICIPRM.2002.1014626",

language = "English",

pages = "731--734",

journal = "Conference Proceedings-International Conference on Indium Phosphide and Related Materials",

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T1 - State of the art of InP and GaAs quantum cascade lasers

AU - Scamarcio, G.

AU - Spagnolo, V.

AU - Troccoli, M.

AU - Zanolli, Z.

AU - Rizzi, F.

AU - Vitiello, M.

AU - Marano, D.

AU - Sabato, A.

AU - Catalano, I. M.

AU - Sibilano, M.

AU - Calabrese, P.

PY - 2002

Y1 - 2002

N2 - The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.

AB - The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.

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EP - 734

JO - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

ER -

State of the art of InP and GaAs quantum cascade lasers

Abstract

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