Spin field-effect transistor in a quantum spin-Hall device

Raffaele Battilomo; Niccoló Scopigno; Carmine Ortix

doi:10.1103/PhysRevB.98.075147

Spin field-effect transistor in a quantum spin-Hall device

Raffaele Battilomo
, Niccoló Scopigno
, Carmine Ortix

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: When ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons.

Original language	English
Article number	075147
Journal	Physical Review B
Volume	98
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.98.075147
Publication status	Published - 27 Aug 2018

Funding

C.O. acknowledges support from a VIDI grant (Project 680-47-543) financed by the Netherlands Organization for Scientific Research (NWO).

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10.1103/PhysRevB.98.075147

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Cite this

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title = "Spin field-effect transistor in a quantum spin-Hall device",

abstract = "We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: When ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons.",

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N2 - We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: When ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons.

AB - We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: When ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons.

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Spin field-effect transistor in a quantum spin-Hall device

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