Spin field-effect transistor in a quantum spin-Hall device

Raffaele Battilomo, Niccoló Scopigno, Carmine Ortix

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: When ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons.

Original languageEnglish
Article number075147
JournalPhysical Review B
Volume98
Issue number7
DOIs
Publication statusPublished - 27 Aug 2018

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