TY - CHAP
T1 - Solar spectrum conversion for photovoltaics using nanoparticles
AU - van Sark, W.G.J.H.M.
AU - Meijerink, A.
AU - Schropp, R.E.I.
PY - 2012
Y1 - 2012
N2 - The possibility to tune chemical and physical properties in nanosized materials has a
strong impact on a variety of technologies, including photovoltaics. One of the prominent
research areas of nanomaterials for photovoltaics involves spectral conversion.
Conventional single-junction semiconductor solar cells only effectively convert photons of
energy close to the semiconductor band gap (Eg) as a result of the mismatch between the
incident solar spectrum and the spectral absorption properties of the material (Green
1982, Luque and Hegedus 2003). Photons with an energy Eph smaller than the band gap
are not absorbed and their energy is not used for carrier generation. Photons with energy
Eph larger than the band gap are absorbed, but the excess energy Eph – Eg is lost due to
thermalization of the generated electrons. These fundamental spectral losses in a singlejunction
silicon solar cell can be as large as 50% (Wolf 1971), while the detailed balance
limit of conversion efficiency for such a cell was determined to be 31% (Shockley and
Queisser 1961). Several routes have been proposed to address spectral losses, and all of
these methods or concepts obviously concentrate on a better exploitation of the solar
spectrum, e.g., multiple stacked cells (Law et al. 2010), intermediate band gaps (Luque
and Marti 1997), multiple exciton generation (Klimov 2006, Klimov et al. 2007), quantum
dot concentrators (Chatten et al. 2003a) and down- and up-converters (Trupke et al. 2002a,
b), and down-shifters (Richards 2006a, Van Sark 2005). In general they are referred to as
Third or Next Generation photovoltaics (PV) (Green 2003, Luque et al. 2005, Martí and
Luque 2004). Nanotechnology is essential in realizing most of these concepts (Soga 2006,
Tsakalakos 2008), and semiconductor nanocrystals have been recognized as ‘building
blocks’ of nanotechnology for use in next generation solar cells (Kamat 2008). Being the
most mature approach, it is not surprising that the current world record conversion
efficiency is 43.5% for a GaInP/GaAs/GaInNAs solar cell (Green et al. 2011), although
this is reached at a concentration of 418 times.
AB - The possibility to tune chemical and physical properties in nanosized materials has a
strong impact on a variety of technologies, including photovoltaics. One of the prominent
research areas of nanomaterials for photovoltaics involves spectral conversion.
Conventional single-junction semiconductor solar cells only effectively convert photons of
energy close to the semiconductor band gap (Eg) as a result of the mismatch between the
incident solar spectrum and the spectral absorption properties of the material (Green
1982, Luque and Hegedus 2003). Photons with an energy Eph smaller than the band gap
are not absorbed and their energy is not used for carrier generation. Photons with energy
Eph larger than the band gap are absorbed, but the excess energy Eph – Eg is lost due to
thermalization of the generated electrons. These fundamental spectral losses in a singlejunction
silicon solar cell can be as large as 50% (Wolf 1971), while the detailed balance
limit of conversion efficiency for such a cell was determined to be 31% (Shockley and
Queisser 1961). Several routes have been proposed to address spectral losses, and all of
these methods or concepts obviously concentrate on a better exploitation of the solar
spectrum, e.g., multiple stacked cells (Law et al. 2010), intermediate band gaps (Luque
and Marti 1997), multiple exciton generation (Klimov 2006, Klimov et al. 2007), quantum
dot concentrators (Chatten et al. 2003a) and down- and up-converters (Trupke et al. 2002a,
b), and down-shifters (Richards 2006a, Van Sark 2005). In general they are referred to as
Third or Next Generation photovoltaics (PV) (Green 2003, Luque et al. 2005, Martí and
Luque 2004). Nanotechnology is essential in realizing most of these concepts (Soga 2006,
Tsakalakos 2008), and semiconductor nanocrystals have been recognized as ‘building
blocks’ of nanotechnology for use in next generation solar cells (Kamat 2008). Being the
most mature approach, it is not surprising that the current world record conversion
efficiency is 43.5% for a GaInP/GaAs/GaInNAs solar cell (Green et al. 2011), although
this is reached at a concentration of 418 times.
U2 - 10.5772/1386
DO - 10.5772/1386
M3 - Chapter
SN - 978-953-51-0304-2
T3 - CIER-E-2012-8
SP - 1
EP - 28
BT - Third generation photovoltaics
A2 - Fthenakis, V.
PB - InTech
CY - Rijeka, Cratia
ER -