Saturation of front propagation in a reaction diffusion process describing plasma damage in porous low-k materials

Soghra Safaverdi*, Gerard T. Barkema, Eddy Kunnen, Adam M. Urbanowicz, Christian Maes

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We propose a three-component reaction-diffusion system yielding an asymptotic logarithmic time dependence for a moving interface. This is naturally related to a Stefan problem for which both one-sided Dirichlet-type and von Neumann-type boundary conditions are considered. We integrate the dependence of the interface motion on diffusion and reaction parameters and we observe a change from transport behavior and interface motion similar to t(1/2) to logarithmic behavior similar to ln t as a function of time. We apply our theoretical findings to the propagation of carbon depletion in porous dielectrics exposed to a low temperature plasma. This diffusion saturation is reached after about one minute in typical experimental situations of plasma damage in microelectronic fabrication. We predict the general dependencies on porosity and reaction rates.

Original languageEnglish
Article number245320
Number of pages6
JournalPhysical review. B, Condensed matter and materials physics
Volume83
Issue number24
DOIs
Publication statusPublished - 28 Jun 2011

Keywords

  • DIELECTRIC-CONSTANT MATERIALS
  • RECOMBINATION
  • FILMS
  • MODEL

Fingerprint

Dive into the research topics of 'Saturation of front propagation in a reaction diffusion process describing plasma damage in porous low-k materials'. Together they form a unique fingerprint.

Cite this