Saturation effects in femtosecond laser ablation of silicon-on-insulator

H. Zhang, D. van Oosten, D.M. Krol, J.I. Dijkhuis

Research output: Contribution to journalArticleAcademicpeer-review


We report a surface morphology study on single-shot submicron features fabricated on silicon on insulator by tightly focused femtosecond laser pulses. In the regime just below single-shot ablation threshold nano-tips are formed, whereas in the regime just above single-shot ablation threshold, a saturation in the ablation depth is found. We attribute this saturation by secondary laser absorption in the laser-induced plasma. In this regime, we find excellent agreement between the measured depths and a simple numerical model. When the laser fluence is further increased, a sharp increase in ablation depth is observed accompanied by a roughening of the ablated hole
Original languageEnglish
Pages (from-to)231108
Number of pages3
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2011


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