Recombination and localization: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films

Huygen J. Jöbsis; Valentina M. Caselli; Sven H.C. Askes; Erik C. Garnett; Tom J. Savenije; Freddy T. Rabouw; Eline M. Hutter

doi:10.1063/5.0061899

Recombination and localization: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films: Unfolding the pathways behind conductivity losses in Cs₂AgBiBr₆ thin films

Huygen J. Jöbsis, Valentina M. Caselli, Sven H.C. Askes, Erik C. Garnett, Tom J. Savenije, Freddy T. Rabouw^*, Eline M. Hutter

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Cs₂AgBiBr₆ (CABB) has been proposed as a promising nontoxic alternative to lead halide perovskites. However, low charge carrier collection efficiencies remain an obstacle for the incorporation of this material in optoelectronic applications. In this work, we study the optoelectronic properties of CABB thin films using steady state and transient absorption and reflectance spectroscopy. We find that optical measurements on such thin films are distorted as a consequence of multiple reflections within the film. Moreover, we discuss the pathways behind conductivity loss in these thin films, using a combination of microsecond transient absorption spectroscopy and time-resolved microwave conductivity measurements. We demonstrate that a combined effect of carrier loss and localization results in the conductivity loss in CABB thin films. Moreover, we find that the charge carrier diffusion length and grain size are of the same order of magnitude. This suggests that the material's surface is an important contributor to charge-carrier loss.

Original language	English
Article number	131908
Pages (from-to)	1-6
Journal	Applied Physics Letters
Volume	119
Issue number	13
DOIs	https://doi.org/10.1063/5.0061899
Publication status	Published - 30 Sept 2021

Bibliographical note

Funding Information:
H.J.J. and E.M.H. acknowledge funding from the Dutch Research Council (NWO) under Grant No. VI.Veni.192.034. H.J.J. and E.M.H. are further supported by the Advanced Research Center Chemical Building Blocks Consortium (ARC CBBC). V.M.C. and T.J.S. acknowledge funding from the Dutch Research Council (NWO), Grant No. 739.017.004. S.H.C.A. acknowledges funding from the Dutch Research Council (NWO), Grant No. VI.Veni.192.062.

Publisher Copyright:
© 2021 Author(s).

Funding

H.J.J. and E.M.H. acknowledge funding from the Dutch Research Council (NWO) under Grant No. VI.Veni.192.034. H.J.J. and E.M.H. are further supported by the Advanced Research Center Chemical Building Blocks Consortium (ARC CBBC). V.M.C. and T.J.S. acknowledge funding from the Dutch Research Council (NWO), Grant No. 739.017.004. S.H.C.A. acknowledges funding from the Dutch Research Council (NWO), Grant No. VI.Veni.192.062.

Access to Document

10.1063/5.0061899

5.0061899Final published version, 1.13 MBLicence: Taverne

Cite this

Jöbsis, H. J., Caselli, V. M., Askes, S. H. C., Garnett, E. C., Savenije, T. J., Rabouw, F. T., & Hutter, E. M. (2021). Recombination and localization: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films: Unfolding the pathways behind conductivity losses in Cs₂AgBiBr₆ thin films. Applied Physics Letters, 119(13), 1-6. Article 131908. https://doi.org/10.1063/5.0061899

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title = "Recombination and localization: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films",

abstract = "Cs2AgBiBr6 (CABB) has been proposed as a promising nontoxic alternative to lead halide perovskites. However, low charge carrier collection efficiencies remain an obstacle for the incorporation of this material in optoelectronic applications. In this work, we study the optoelectronic properties of CABB thin films using steady state and transient absorption and reflectance spectroscopy. We find that optical measurements on such thin films are distorted as a consequence of multiple reflections within the film. Moreover, we discuss the pathways behind conductivity loss in these thin films, using a combination of microsecond transient absorption spectroscopy and time-resolved microwave conductivity measurements. We demonstrate that a combined effect of carrier loss and localization results in the conductivity loss in CABB thin films. Moreover, we find that the charge carrier diffusion length and grain size are of the same order of magnitude. This suggests that the material's surface is an important contributor to charge-carrier loss.",

author = "J{\"o}bsis, {Huygen J.} and Caselli, {Valentina M.} and Askes, {Sven H.C.} and Garnett, {Erik C.} and Savenije, {Tom J.} and Rabouw, {Freddy T.} and Hutter, {Eline M.}",

note = "Funding Information: H.J.J. and E.M.H. acknowledge funding from the Dutch Research Council (NWO) under Grant No. VI.Veni.192.034. H.J.J. and E.M.H. are further supported by the Advanced Research Center Chemical Building Blocks Consortium (ARC CBBC). V.M.C. and T.J.S. acknowledge funding from the Dutch Research Council (NWO), Grant No. 739.017.004. S.H.C.A. acknowledges funding from the Dutch Research Council (NWO), Grant No. VI.Veni.192.062. Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = sep,

day = "30",

doi = "10.1063/5.0061899",

language = "English",

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Jöbsis, HJ, Caselli, VM, Askes, SHC, Garnett, EC, Savenije, TJ, Rabouw, FT & Hutter, EM 2021, 'Recombination and localization: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films: Unfolding the pathways behind conductivity losses in Cs₂AgBiBr₆ thin films', Applied Physics Letters, vol. 119, no. 13, 131908, pp. 1-6. https://doi.org/10.1063/5.0061899

Recombination and localization: Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films: Unfolding the pathways behind conductivity losses in Cs₂AgBiBr₆ thin films. / Jöbsis, Huygen J.; Caselli, Valentina M.; Askes, Sven H.C. et al.
In: Applied Physics Letters, Vol. 119, No. 13, 131908, 30.09.2021, p. 1-6.

Research output: Contribution to journal › Article › Academic › peer-review

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T2 - Unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films

AU - Jöbsis, Huygen J.

AU - Caselli, Valentina M.

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AU - Garnett, Erik C.

AU - Savenije, Tom J.

AU - Rabouw, Freddy T.

AU - Hutter, Eline M.

N1 - Funding Information: H.J.J. and E.M.H. acknowledge funding from the Dutch Research Council (NWO) under Grant No. VI.Veni.192.034. H.J.J. and E.M.H. are further supported by the Advanced Research Center Chemical Building Blocks Consortium (ARC CBBC). V.M.C. and T.J.S. acknowledge funding from the Dutch Research Council (NWO), Grant No. 739.017.004. S.H.C.A. acknowledges funding from the Dutch Research Council (NWO), Grant No. VI.Veni.192.062. Publisher Copyright: © 2021 Author(s).

PY - 2021/9/30

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N2 - Cs2AgBiBr6 (CABB) has been proposed as a promising nontoxic alternative to lead halide perovskites. However, low charge carrier collection efficiencies remain an obstacle for the incorporation of this material in optoelectronic applications. In this work, we study the optoelectronic properties of CABB thin films using steady state and transient absorption and reflectance spectroscopy. We find that optical measurements on such thin films are distorted as a consequence of multiple reflections within the film. Moreover, we discuss the pathways behind conductivity loss in these thin films, using a combination of microsecond transient absorption spectroscopy and time-resolved microwave conductivity measurements. We demonstrate that a combined effect of carrier loss and localization results in the conductivity loss in CABB thin films. Moreover, we find that the charge carrier diffusion length and grain size are of the same order of magnitude. This suggests that the material's surface is an important contributor to charge-carrier loss.

AB - Cs2AgBiBr6 (CABB) has been proposed as a promising nontoxic alternative to lead halide perovskites. However, low charge carrier collection efficiencies remain an obstacle for the incorporation of this material in optoelectronic applications. In this work, we study the optoelectronic properties of CABB thin films using steady state and transient absorption and reflectance spectroscopy. We find that optical measurements on such thin films are distorted as a consequence of multiple reflections within the film. Moreover, we discuss the pathways behind conductivity loss in these thin films, using a combination of microsecond transient absorption spectroscopy and time-resolved microwave conductivity measurements. We demonstrate that a combined effect of carrier loss and localization results in the conductivity loss in CABB thin films. Moreover, we find that the charge carrier diffusion length and grain size are of the same order of magnitude. This suggests that the material's surface is an important contributor to charge-carrier loss.

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