Reaction mechanism for deposition of silicon nitride by hot-wire CVD with ultra-High deposition rates (>7nm/s)

V. Verlaan, Z.S. Houweling, C.H.M. van der Werf, H.D. Goldbach, R.E.I. Schropp

Research output: Contribution to journal › Meeting Abstract › Other research output

Original language	Undefined/Unknown
Journal	Materials Research Society symposia proceedings
Volume	910
Issue number	0910-A03-03
Publication status	Published - 2006

Cite this

@article{fde35e7480834e50939e53a1f7b3ac87,

title = "Reaction mechanism for deposition of silicon nitride by hot-wire CVD with ultra-High deposition rates (>7nm/s)",

author = "V. Verlaan and Z.S. Houweling and \{van der Werf\}, C.H.M. and H.D. Goldbach and R.E.I. Schropp",

year = "2006",

language = "Undefined/Unknown",

volume = "910",

journal = "Materials Research Society symposia proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

number = "0910-A03-03",

}

TY - JOUR

T1 - Reaction mechanism for deposition of silicon nitride by hot-wire CVD with ultra-High deposition rates (>7nm/s)

AU - Verlaan, V.

AU - Houweling, Z.S.

AU - van der Werf, C.H.M.

AU - Goldbach, H.D.

AU - Schropp, R.E.I.

PY - 2006

Y1 - 2006

M3 - Meeting Abstract

SN - 0272-9172

VL - 910

JO - Materials Research Society symposia proceedings

JF - Materials Research Society symposia proceedings

IS - 0910-A03-03

ER -