Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

J. Z. Zhao, W. Fan, M. J. Verstraete, Z. Zanolli, J. Fan, X. B. Yang, H. Xu*, S. Y. Tong

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101-0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (101-cr;0) surface of many wurtzite compounds.

Original languageEnglish
Article number116101
JournalPhysical Review Letters
Volume117
Issue number11
DOIs
Publication statusPublished - 6 Sept 2016
Externally publishedYes

Funding

We thank Professor M. H. Whangbo for useful discussions. This work is supported by the National Natural Science Foundation of China (Grants No.11204185, No. 11334003, and No. 11404159). Z. Z. acknowledges financial support by the EC under the Marie-Curie fellowship (Grant No.PIEF-Ga-2011-300036) and by the Deutsche Forschungsgemeinschaft (German Research Foundation) Grant No.ZA 780/3-1

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