TY - JOUR
T1 - Quantitative Agreement between Electron-Optical Phase Images of WSe2 and Simulations Based on Electrostatic Potentials that Include Bonding Effects
AU - Borghardt, S.
AU - Winkler, F.
AU - Zanolli, Z.
AU - Verstraete, M. J.
AU - Barthel, J.
AU - Tavabi, A. H.
AU - Dunin-Borkowski, R. E.
AU - Kardynal, B. E.
PY - 2017/2/22
Y1 - 2017/2/22
N2 - The quantitative analysis of electron-optical phase images recorded using off-axis electron holography often relies on the use of computer simulations of electron propagation through a sample. However, simulations that make use of the independent atom approximation are known to overestimate experimental phase shifts by approximately 10%, as they neglect bonding effects. Here, we compare experimental and simulated phase images for few-layer WSe2. We show that a combination of pseudopotentials and all-electron density functional theory calculations can be used to obtain accurate mean electron phases, as well as improved atomic-resolution spatial distribution of the electron phase. The comparison demonstrates a perfect contrast match between experimental and simulated atomic-resolution phase images for a sample of precisely known thickness. The low computational cost of this approach makes it suitable for the analysis of large electronic systems, including defects, substitutional atoms, and material interfaces.
AB - The quantitative analysis of electron-optical phase images recorded using off-axis electron holography often relies on the use of computer simulations of electron propagation through a sample. However, simulations that make use of the independent atom approximation are known to overestimate experimental phase shifts by approximately 10%, as they neglect bonding effects. Here, we compare experimental and simulated phase images for few-layer WSe2. We show that a combination of pseudopotentials and all-electron density functional theory calculations can be used to obtain accurate mean electron phases, as well as improved atomic-resolution spatial distribution of the electron phase. The comparison demonstrates a perfect contrast match between experimental and simulated atomic-resolution phase images for a sample of precisely known thickness. The low computational cost of this approach makes it suitable for the analysis of large electronic systems, including defects, substitutional atoms, and material interfaces.
UR - http://www.scopus.com/inward/record.url?scp=85014345932&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.118.086101
DO - 10.1103/PhysRevLett.118.086101
M3 - Article
C2 - 28282203
AN - SCOPUS:85014345932
SN - 0031-9007
VL - 118
JO - Physical Review Letters
JF - Physical Review Letters
IS - 8
M1 - 086101
ER -