Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors

Marnix Vreugdenhil; Dries Van Oosten

doi:10.1117/12.2685122

Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors

Marnix Vreugdenhil^*, Dries Van Oosten

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We experimentally study single-shot laser ablation of GaSb, GaAs, GaP and GaN, for laser pulse durations ranging from 200 fs to 20 ps. We find that the laser ablation threshold fluence of GaSb is almost independent of pulse duration, whereas the ablation threshold for GaN depends strongly on pulse duration. More generally we find that the larger the bandgap, the stronger the dependence of pulse duration. This is expected, as intrinsic laser absorption is mainly linear when the bandgap is small compared to the photon energy, whereas a larger bandgap requires strong field ionization. Thus a larger bandgap leads to a stronger influence of the peak intensity of the pulse and therefore a stronger dependence on the pulse duration, when compared to smaller bandgaps.

Original language	English
Title of host publication	Laser-Induced Damage in Optical Materials 2023
Editors	Christopher Wren Carr, Detlev Ristau, Carmen S. Menoni, Michael D. Thomas
Publisher	SPIE
ISBN (Electronic)	9781510666818
DOIs	https://doi.org/10.1117/12.2685122
Publication status	Published - 24 Nov 2023
Event	55th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2023 - Dublin/Livermore, United States Duration: 17 Sept 2023 → 20 Sept 2023

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	12726
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	55th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2023
Country/Territory	United States
City	Dublin/Livermore
Period	17/09/23 → 20/09/23

Bibliographical note

Publisher Copyright:
© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

Keywords

ablation
GaAs
GaN
GaP
GaSb
heat conductivity
Laser induced damage
multiphoton absorption
nonlinear absorption
pulse duration scaling
strong field ionization

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10.1117/12.2685122

1272609Final published version, 9.03 MBLicence: Taverne

Cite this

@inproceedings{cf31344cab464e758f2a429d3b73950a,

title = "Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors",

abstract = "We experimentally study single-shot laser ablation of GaSb, GaAs, GaP and GaN, for laser pulse durations ranging from 200 fs to 20 ps. We find that the laser ablation threshold fluence of GaSb is almost independent of pulse duration, whereas the ablation threshold for GaN depends strongly on pulse duration. More generally we find that the larger the bandgap, the stronger the dependence of pulse duration. This is expected, as intrinsic laser absorption is mainly linear when the bandgap is small compared to the photon energy, whereas a larger bandgap requires strong field ionization. Thus a larger bandgap leads to a stronger influence of the peak intensity of the pulse and therefore a stronger dependence on the pulse duration, when compared to smaller bandgaps.",

keywords = "ablation, GaAs, GaN, GaP, GaSb, heat conductivity, Laser induced damage, multiphoton absorption, nonlinear absorption, pulse duration scaling, strong field ionization",

author = "Marnix Vreugdenhil and {Van Oosten}, Dries",

note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; 55th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2023 ; Conference date: 17-09-2023 Through 20-09-2023",

year = "2023",

month = nov,

day = "24",

doi = "10.1117/12.2685122",

language = "English",

series = "Proceedings of SPIE ",

publisher = "SPIE",

editor = "Carr, {Christopher Wren} and Detlev Ristau and Menoni, {Carmen S.} and Thomas, {Michael D.}",

booktitle = "Laser-Induced Damage in Optical Materials 2023",

address = "United States",

}

Vreugdenhil, M & Van Oosten, D 2023, Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors. in CW Carr, D Ristau, CS Menoni & MD Thomas (eds), Laser-Induced Damage in Optical Materials 2023., 1272609, Proceedings of SPIE , vol. 12726, SPIE, 55th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2023, Dublin/Livermore, United States, 17/09/23. https://doi.org/10.1117/12.2685122

Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors. / Vreugdenhil, Marnix ; Van Oosten, Dries.
Laser-Induced Damage in Optical Materials 2023. ed. / Christopher Wren Carr; Detlev Ristau; Carmen S. Menoni; Michael D. Thomas. SPIE, 2023. 1272609 (Proceedings of SPIE ; Vol. 12726).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors

AU - Vreugdenhil, Marnix

AU - Van Oosten, Dries

N1 - Publisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

PY - 2023/11/24

Y1 - 2023/11/24

N2 - We experimentally study single-shot laser ablation of GaSb, GaAs, GaP and GaN, for laser pulse durations ranging from 200 fs to 20 ps. We find that the laser ablation threshold fluence of GaSb is almost independent of pulse duration, whereas the ablation threshold for GaN depends strongly on pulse duration. More generally we find that the larger the bandgap, the stronger the dependence of pulse duration. This is expected, as intrinsic laser absorption is mainly linear when the bandgap is small compared to the photon energy, whereas a larger bandgap requires strong field ionization. Thus a larger bandgap leads to a stronger influence of the peak intensity of the pulse and therefore a stronger dependence on the pulse duration, when compared to smaller bandgaps.

AB - We experimentally study single-shot laser ablation of GaSb, GaAs, GaP and GaN, for laser pulse durations ranging from 200 fs to 20 ps. We find that the laser ablation threshold fluence of GaSb is almost independent of pulse duration, whereas the ablation threshold for GaN depends strongly on pulse duration. More generally we find that the larger the bandgap, the stronger the dependence of pulse duration. This is expected, as intrinsic laser absorption is mainly linear when the bandgap is small compared to the photon energy, whereas a larger bandgap requires strong field ionization. Thus a larger bandgap leads to a stronger influence of the peak intensity of the pulse and therefore a stronger dependence on the pulse duration, when compared to smaller bandgaps.

KW - ablation

KW - GaAs

KW - GaN

KW - GaP

KW - GaSb

KW - heat conductivity

KW - Laser induced damage

KW - multiphoton absorption

KW - nonlinear absorption

KW - pulse duration scaling

KW - strong field ionization

UR - http://www.scopus.com/inward/record.url?scp=85181120596&partnerID=8YFLogxK

U2 - 10.1117/12.2685122

DO - 10.1117/12.2685122

M3 - Conference contribution

AN - SCOPUS:85181120596

T3 - Proceedings of SPIE

BT - Laser-Induced Damage in Optical Materials 2023

A2 - Carr, Christopher Wren

A2 - Ristau, Detlev

A2 - Menoni, Carmen S.

A2 - Thomas, Michael D.

PB - SPIE

T2 - 55th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2023

Y2 - 17 September 2023 through 20 September 2023

ER -

Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors

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Keywords

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