Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon

E.A.G. Hamers, J. Bezemer, W. van der Weg

Research output: Contribution to journal › Article › Academic › peer-review

Cite this

@article{edb152127562461c9a4adc124a0a6469,

title = "Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon",

author = "E.A.G. Hamers and J. Bezemer and {van der Weg}, W.",

year = "1999",

language = "Undefined/Unknown",

volume = "75",

pages = "609--611",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}