Porous etching: A means to enhance the photoresponse of indirect semiconductors

Ben H. Erné; Daniël Vanmaekelbergh; John J. Kelly

doi:10.1002/adma.19950070813

Porous etching: A means to enhance the photoresponse of indirect semiconductors

Ben H. Erné^*, Daniël Vanmaekelbergh, John J. Kelly

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

A strategy for improving the photoresponse for junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed. By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining (Figure Presented.) .

Original language	English
Pages (from-to)	739-742
Number of pages	4
Journal	Advanced Materials
Volume	7
Issue number	8
DOIs	https://doi.org/10.1002/adma.19950070813
Publication status	Published - Aug 1995

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title = "Porous etching: A means to enhance the photoresponse of indirect semiconductors",

abstract = "A strategy for improving the photoresponse for junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed. By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining (Figure Presented.) .",

author = "Ern{\'e}, {Ben H.} and Dani{\"e}l Vanmaekelbergh and Kelly, {John J.}",

year = "1995",

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AU - Erné, Ben H.

AU - Vanmaekelbergh, Daniël

AU - Kelly, John J.

PY - 1995/8

Y1 - 1995/8

N2 - A strategy for improving the photoresponse for junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed. By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining (Figure Presented.) .

AB - A strategy for improving the photoresponse for junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed. By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining (Figure Presented.) .

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DO - 10.1002/adma.19950070813

M3 - Article

AN - SCOPUS:0029359430

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Porous etching: A means to enhance the photoresponse of indirect semiconductors

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