Photoetching mechanisms of GaN in alkaline S2O2-8

D.H. van Dorp, J.L. Weyher, M.R. Kooijman, J.J. Kelly

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A study of the electrochemistry of n-type GaN in an alkaline peroxydisulfate S2O8 2− solution was used to explain the mechanism of photoetching of the semiconductor under open-circuit conditions. The observed enhancement of the photoetch rate as a result of platinum either directly on or in electrical contact with the semiconductor is shown to be mainly a photogalvanic effect. The factors determining the etching kinetics and surface morphology are elucidated.
Original languageUndefined/Unknown
Pages (from-to)D371-D376
Number of pages6
JournalJournal of the Electrochemical Society
Issue number10
Publication statusPublished - 2009

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