Photoelectrochemistry and Etching of SiC: a Comparison with Si

J.J. Kelly; D.H. van Dorp; J.L. Weyher

Photoelectrochemistry and Etching of SiC: a Comparison with Si

J.J. Kelly
, D.H. van Dorp
, J.L. Weyher

Dept of Chemistry

extern

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.

Original language	Undefined/Unknown
Pages (from-to)	513-524
Number of pages	15
Journal	ECS Transactions
Volume	6
Issue number	2
Publication status	Published - 2007

Access to Document

2007-013
Open Access (free)
Accepted author manuscript, 837 KB

Cite this

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title = "Photoelectrochemistry and Etching of SiC: a Comparison with Si",

abstract = "The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.",

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AU - Kelly, J.J.

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AU - Weyher, J.L.

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N2 - The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.

AB - The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.

M3 - Article

SN - 1938-5862

VL - 6

SP - 513

EP - 524

JO - ECS Transactions

JF - ECS Transactions

IS - 2

ER -