On the argon and oxygen incorporation into SiOx through ion implantation during reactive plasma magnetron sputter deposition

The incorporation of argon in SiOx (0 x 2) during reactive plasma magnetron sputter deposition using a O2/Ar plasma and a silicon sputter cathode has been investigated and related to the flux of argon ions created in the plasma afterglowregion on the growth surface. The argon concentration in the grown films appears to be mainly a function of the x-value, independent of the extent of ion bombardment on the growing surface, and only slightly dependent on the substrate temperature during the growth ( 2 are reached.