Nanorod solar cell with an ultrathin a-Si:H absorber layer

Y. Kuang; C.H.M. van der Werf; Z.S. Houweling; R.E.I. Schropp

doi:10.1063/1.3567527

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Y. Kuang, C.H.M. van der Werf, Z.S. Houweling, R.E.I. Schropp

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO) nanorod arrays. The ZnO nanorods were prepared by aqueous chemical growth at 80 °C. The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker ( ∼ 75 nm) a-Si:H absorber layers.

Original language	English
Article number	3567527
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	11
DOIs	https://doi.org/10.1063/1.3567527
Publication status	Published - 2011

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.3567527

Doi 10
Open Access (free)
Final published version, 296 KB

Cite this

@article{f33562e0159b4041a8852a82d80b6d3d,

title = "Nanorod solar cell with an ultrathin a-Si:H absorber layer",

abstract = "We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO) nanorod arrays. The ZnO nanorods were prepared by aqueous chemical growth at 80 °C. The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker ( ∼ 75 nm) a-Si:H absorber layers.",

author = "Y. Kuang and {van der Werf}, C.H.M. and Z.S. Houweling and R.E.I. Schropp",

year = "2011",

doi = "10.1063/1.3567527",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Nanorod solar cell with an ultrathin a-Si:H absorber layer

AU - Kuang, Y.

AU - van der Werf, C.H.M.

AU - Houweling, Z.S.

AU - Schropp, R.E.I.

PY - 2011

Y1 - 2011

N2 - We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO) nanorod arrays. The ZnO nanorods were prepared by aqueous chemical growth at 80 °C. The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker ( ∼ 75 nm) a-Si:H absorber layers.

AB - We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO) nanorod arrays. The ZnO nanorods were prepared by aqueous chemical growth at 80 °C. The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker ( ∼ 75 nm) a-Si:H absorber layers.

U2 - 10.1063/1.3567527

DO - 10.1063/1.3567527

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 3567527

ER -

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Abstract

UN SDGs

Access to Document

Fingerprint

Cite this