Modeling of the Band Gap Profile in the Intrinsic Layer of the a-SiGe:H Material: Application in Solar Cells

R. Jimenez Zambrano, F.A. Rubinelli, W.M. Arnold Bik, J.K. Rath, R.E.I. Schropp

Research output: Contribution to journal › Article › Academic › peer-review

Original language	Undefined/Unknown
Pages (from-to)	A6.9.
Journal	Materials Research Society symposia proceedings
Volume	715
Publication status	Published - 2002

Cite this

@article{1a040900a78e4d18b92a43d9caa47bb2,

title = "Modeling of the Band Gap Profile in the Intrinsic Layer of the a-SiGe:H Material: Application in Solar Cells",

author = "{Jimenez Zambrano}, R. and F.A. Rubinelli and {Arnold Bik}, W.M. and J.K. Rath and R.E.I. Schropp",

year = "2002",

language = "Undefined/Unknown",

volume = "715",

pages = "A6.9.",

journal = "Materials Research Society symposia proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Modeling of the Band Gap Profile in the Intrinsic Layer of the a-SiGe:H Material: Application in Solar Cells

AU - Jimenez Zambrano, R.

AU - Rubinelli, F.A.

AU - Arnold Bik, W.M.

AU - Rath, J.K.

AU - Schropp, R.E.I.

PY - 2002

Y1 - 2002

M3 - Article

SN - 0272-9172

VL - 715

SP - A6.9.

JO - Materials Research Society symposia proceedings

JF - Materials Research Society symposia proceedings

ER -