Mid-infrared pump–probe spectroscopy of Si–H stretch modes in porous silicon

K.W. Jobson; J.P.R. Wells; N.Q. Vinh; P.J. Phillips; C.R. Pidgeon; J.I. Dijkhuis

Mid-infrared pump–probe spectroscopy of Si–H stretch modes in porous silicon

K.W. Jobson, J.P.R. Wells, N.Q. Vinh, P.J. Phillips, C.R. Pidgeon, J.I. Dijkhuis

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Abstract

Using the Dutch free electron laser FELIX, we have investigated vibrational relaxation in free standing porous silicon (p-Si) films. Pump–probe measurements resonant with the SiH, SiH2 and O3SiH stretching modes yield temperature dependent measurements of the decay rates which demonstrate that all the modes decay via at least one internal defect mode with the excess vibrational energy distributed among the Si–Si bath phonons in a fourth order decay process.

Original language	Undefined/Unknown
Pages (from-to)	740-742
Number of pages	3
Journal	Optical Materials
Volume	30
Issue number	5
Publication status	Published - 2008

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title = "Mid-infrared pump–probe spectroscopy of Si–H stretch modes in porous silicon",

abstract = "Using the Dutch free electron laser FELIX, we have investigated vibrational relaxation in free standing porous silicon (p-Si) films. Pump–probe measurements resonant with the SiH, SiH2 and O3SiH stretching modes yield temperature dependent measurements of the decay rates which demonstrate that all the modes decay via at least one internal defect mode with the excess vibrational energy distributed among the Si–Si bath phonons in a fourth order decay process.",

author = "K.W. Jobson and J.P.R. Wells and N.Q. Vinh and P.J. Phillips and C.R. Pidgeon and J.I. Dijkhuis",

year = "2008",

language = "Undefined/Unknown",

volume = "30",

pages = "740--742",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

number = "5",

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TY - JOUR

T1 - Mid-infrared pump–probe spectroscopy of Si–H stretch modes in porous silicon

AU - Jobson, K.W.

AU - Wells, J.P.R.

AU - Vinh, N.Q.

AU - Phillips, P.J.

AU - Pidgeon, C.R.

AU - Dijkhuis, J.I.

PY - 2008

Y1 - 2008

N2 - Using the Dutch free electron laser FELIX, we have investigated vibrational relaxation in free standing porous silicon (p-Si) films. Pump–probe measurements resonant with the SiH, SiH2 and O3SiH stretching modes yield temperature dependent measurements of the decay rates which demonstrate that all the modes decay via at least one internal defect mode with the excess vibrational energy distributed among the Si–Si bath phonons in a fourth order decay process.

AB - Using the Dutch free electron laser FELIX, we have investigated vibrational relaxation in free standing porous silicon (p-Si) films. Pump–probe measurements resonant with the SiH, SiH2 and O3SiH stretching modes yield temperature dependent measurements of the decay rates which demonstrate that all the modes decay via at least one internal defect mode with the excess vibrational energy distributed among the Si–Si bath phonons in a fourth order decay process.

M3 - Article

SN - 0925-3467

VL - 30

SP - 740

EP - 742

JO - Optical Materials

JF - Optical Materials

IS - 5

ER -