Luminescence quenching in erbium-doped hydrogenated amorphous silicon

Jung H. Shin, R. Serna, G. N. van den Hoven, A. Polman, W. G. J. H. M. van Sark, A. M. Vredenberg

Research output: Contribution to journalArticleAcademicpeer-review


Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 μm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300-400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.
Original languageEnglish
Pages (from-to)46-48
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1 Jan 1996


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