Low Temperature Silicon Nitride by Hot Wire Chemical Vapour Deposition for the Use in Impermeable Thin Film Encapsulation on Flexible Substrates

Keyphrases

• Low Temperature 100%
• Hot Filament Chemical Vapor Deposition (HFCVD) 100%
• Silicon Nitride 100%
• Thin Film Encapsulation 100%
• Flexible Substrate 100%
• Silicon Nitride Layer 100%
• Polymer Film 100%
• Refractive Index 50%
• High Density 50%
• Peak Position 50%
• Hot Wire 50%
• Substrate Temperature 50%
• Etching Rate 50%
• High Transparency 50%
• ICVD 50%
• Double Layer 50%
• Non-porous 50%
• Fourier Transform Infrared Spectroscopy (FT-IR) 50%
• Transmission Measurement 50%
• Interlayer Properties 50%
• Glycidyl Methacrylate 50%
• Extinction Coefficient 50%
• Nitride Materials 50%
• Chemical Vapor 50%
• HF Etching 50%
• Infrared Absorption 50%
• Porous Silicon Nitride 50%
• Impermeability 50%
• N-Si 50%

Material Science

• Chemical Vapor Deposition 100%
• Silicon Nitride 100%
• Thin Films 100%
• Polymer Films 50%
• Density 25%
• Refractive Index 25%
• Porous Silicon 25%
• Absorption Spectra 25%