Influence of electrochemical etching on electroluminescence from n-type 4H- and 6H-SiC

D.H. van Dorp; J.H. den Otter; N. Hijnen; M. Bergmeijer; J.J. Kelly

Influence of electrochemical etching on electroluminescence from n-type 4H- and 6H-SiC

D.H. van Dorp
, J.H. den Otter
, N. Hijnen
, M. Bergmeijer
, J.J. Kelly

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Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.

Original language	Undefined/Unknown
Pages (from-to)	D49-D52
Number of pages	4
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	6
Publication status	Published - 2009

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title = "Influence of electrochemical etching on electroluminescence from n-type 4H- and 6H-SiC",

abstract = "The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.",

author = "\{van Dorp\}, D.H. and \{den Otter\}, J.H. and N. Hijnen and M. Bergmeijer and J.J. Kelly",

year = "2009",

language = "Undefined/Unknown",

volume = "12",

pages = "D49--D52",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "6",

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TY - JOUR

T1 - Influence of electrochemical etching on electroluminescence from n-type 4H- and 6H-SiC

AU - van Dorp, D.H.

AU - den Otter, J.H.

AU - Hijnen, N.

AU - Bergmeijer, M.

AU - Kelly, J.J.

PY - 2009

Y1 - 2009

N2 - The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.

AB - The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.

M3 - Article

SN - 1099-0062

VL - 12

SP - D49-D52

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -