Influence of electrochemical etching on electroluminescence from n-type 4H- and 6H-SiC

D.H. van Dorp, J.H. den Otter, N. Hijnen, M. Bergmeijer, J.J. Kelly

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The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.
Original languageUndefined/Unknown
Pages (from-to)D49-D52
Number of pages4
JournalElectrochemical and Solid-State Letters
Issue number6
Publication statusPublished - 2009

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