Abstract
It is known that the electrochemistry of silicon in alkaline solution is closely linked to the anisotropic etching of the semiconductor. In this work the influence of two commonly used additives, hydrogen peroxide and isopropyl alcohol, on the surface chemistry of silicon in KOH solution was investigated by electrochemical methods. The results allow us to draw conclusions regarding the role of the additives in the chemical and electrochemical reactions.
| Original language | Undefined/Unknown |
|---|---|
| Pages (from-to) | 3526-3531 |
| Number of pages | 6 |
| Journal | Electrochimica Acta |
| Volume | 54 |
| Issue number | 13 |
| Publication status | Published - 2009 |