Influence of chemical additives on the surface reactivity of Si in KOH solution

H.G.G. Philipsen, J.J. Kelly

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It is known that the electrochemistry of silicon in alkaline solution is closely linked to the anisotropic etching of the semiconductor. In this work the influence of two commonly used additives, hydrogen peroxide and isopropyl alcohol, on the surface chemistry of silicon in KOH solution was investigated by electrochemical methods. The results allow us to draw conclusions regarding the role of the additives in the chemical and electrochemical reactions.
Original languageUndefined/Unknown
Pages (from-to)3526-3531
Number of pages6
JournalElectrochimica Acta
Issue number13
Publication statusPublished - 2009

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