Independent Geometrical Control of Spin and Charge Resistances in Curved Spintronics

Kumar Sourav Das; Denys Makarov; Paola Gentile; Mario Cuoco; Bart J. Van Wees; Carmine Ortix; Ivan J. Vera-Marun

doi:10.1021/acs.nanolett.9b01994

Independent Geometrical Control of Spin and Charge Resistances in Curved Spintronics

Kumar Sourav Das^*, Denys Makarov, Paola Gentile, Mario Cuoco, Bart J. Van Wees, Carmine Ortix, Ivan J. Vera-Marun

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with a higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can be used to reach an independent tuning of spin transport and charge transport characteristics. These results laid the foundation for the design of efficient pure spin current-based electronics, which can be integrated in complex three-dimensional architectures.

Original language	English
Pages (from-to)	6839-6844
Number of pages	6
Journal	Nano Letters
Volume	19
Issue number	10
DOIs	https://doi.org/10.1021/acs.nanolett.9b01994
Publication status	Published - 13 Sept 2019

Funding

We thank Dr. S. Baunack (IFW Dresden) for his contribution at the initial stage of this work and J. G. Holstein, H. M. de Roosz, H. Adema, and T. Schouten for their technical assistance. Support by the Structural Characterization Facilities at IBC of the HZDR is gratefully acknowledged. We acknowledge the financial support of the Zernike Institute for Advanced Materials and the Future and Emerging Technologies (FET) program within the Seventh Framework Program for Research of the European Commission, under FET-Open grant no. 618083 (CNTQC). C.O. acknowledges support from the Deutsche Forschungsgemeinschaft (grant no. OR 404/1-1) and from a VIDI grant (project 680-47-543) financed by The Netherlands Organization for Scientific Research (NWO). D.M. acknowledges support from the ERC within the EU seventh Framework Programme (ERC grant no. 306277).

Keywords

curved nanoarchitectures
electrical and spin resistance
geometrical control
nonlocal spin valves
Spintronics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Independent Geometrical Control of Spin and Charge Resistances in Curved Spintronics",

abstract = "Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with a higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can be used to reach an independent tuning of spin transport and charge transport characteristics. These results laid the foundation for the design of efficient pure spin current-based electronics, which can be integrated in complex three-dimensional architectures.",

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AU - Das, Kumar Sourav

AU - Makarov, Denys

AU - Gentile, Paola

AU - Cuoco, Mario

AU - Van Wees, Bart J.

AU - Ortix, Carmine

AU - Vera-Marun, Ivan J.

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N2 - Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with a higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can be used to reach an independent tuning of spin transport and charge transport characteristics. These results laid the foundation for the design of efficient pure spin current-based electronics, which can be integrated in complex three-dimensional architectures.

AB - Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with a higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can be used to reach an independent tuning of spin transport and charge transport characteristics. These results laid the foundation for the design of efficient pure spin current-based electronics, which can be integrated in complex three-dimensional architectures.

KW - curved nanoarchitectures

KW - electrical and spin resistance

KW - geometrical control

KW - nonlocal spin valves

KW - Spintronics

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Independent Geometrical Control of Spin and Charge Resistances in Curved Spintronics

Abstract

Funding

Keywords

UN SDGs

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