Identification of individual and few layers of WS2 using Raman Spectroscopy

  • Ayse Berkdemir
  • , Humberto R. Gutiérrez
  • , Andrés R. Botello-Méndez
  • , Néstor Perea-López
  • , Ana Laura Elías
  • , Chen Ing Chia
  • , Bei Wang
  • , Vincent H. Crespi
  • , Florentino López-Urías
  • , Jean Christophe Charlier
  • , Humberto Terrones
  • , Mauricio Terrones*
  • *Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The Raman scattering of single- and few-layered WS2 is studied as a function of the number of S-W-S layers and the excitation wavelength in the visible range (488, 514 and 647 nm). For the three excitation wavelengths used in this study, the frequency of the A 1g (Γ) phonon mode monotonically decreases with the number of layers. For single-layer WS2, the 514.5 nm laser excitation generates a second-order Raman resonance involving the longitudinal acoustic mode (LA(M)). This resonance results from a coupling between the electronic band structure and lattice vibrations. First-principles calculations were used to determine the electronic and phonon band structures of single-layer and bulk WS2. The reduced intensity of the 2LA mode was then computed, as a function of the laser wavelength, from the fourth-order Fermi golden rule. Our observations establish an unambiguous and nondestructive Raman fingerprint for identifying single- and few-layered WS2 films.

Original languageEnglish
Article number1755
JournalScientific Reports
Volume3
DOIs
Publication statusPublished - 2013
Externally publishedYes

Funding

M.T., H.R.G., A.L.E. and V.H.C. acknowledge funding from the U. S. Army Research Office MURI grant W911NF-11-1-0362. This research was partially supported by the Materials Simulation Center of the Materials Research Institute, the Research Computing and Cyberinfrastructure unit of Information Technology Services. MT acknowledges JST-Japan for funding the Research Center for Exotic NanoCarbons, under the Japanese regional Innovation Strategy Program by the Excellence. M.T. and V.H.C. also acknowledge support from a Penn State Center for Nanoscale Science Seed grant on 2-D Layered Materials (DMR-0820404). This publication was also supported by the Pennsylvania State University Materials Research Institute Nanofabrication Lab and the National Science Foundation Cooperative Agreement No. ECS-0335765. Electron microscopy characterization facilities within the Materials Research Institute at the Pennsylvania State University were also used for this research. A.R.B.M. and J.-C.C. acknowledge financial support from the F.R.S.-FNRS of Belgium. This research is directly connected to the ARC on « Graphene StressTronics » sponsored by the Communauté Française de Belgique.

FundersFunder number
F.R.S.-FNRS of Belgium
JST-Japan
Materials Simulation Center of the Materials Research Institute
Penn State Center for Nanoscale Science SeedDMR-0820404
U. S. Army Research Office MURIW911NF-11-1-0362
National Science Foundation
Directorate for Engineering0335765
Pennsylvania State University

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