High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

J.A. Schuttauf, C.H.M. van der Werf, I.M. Kielen, W.G.J.H.M. van Sark, J.K. Rath

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased dangling bond density. Due to the combined chemical and field effect passivation of the intrinsic/n-type a-Si:H layer stack, we obtained minority carrier lifetimes with a value as high as 13.3 ms at an injection level of 1015 cm 3. For higher annealing temperatures, a decreased passivation quality is observed, which is attributed to hydrogen effusion.
Original languageEnglish
Pages (from-to)203503/1-203503/4
Number of pages4
JournalApplied Physics Letters
Volume99
Issue number20
DOIs
Publication statusPublished - 2011

Fingerprint

Dive into the research topics of 'High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon'. Together they form a unique fingerprint.

Cite this