Abstract
We investigate the influence of thermal annealing on the passivation quality of crystalline silicon
(c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For
temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a
decreased dangling bond density. Due to the combined chemical and field effect passivation of the
intrinsic/n-type a-Si:H layer stack, we obtained minority carrier lifetimes with a value as high as
13.3 ms at an injection level of 1015 cm 3. For higher annealing temperatures, a decreased
passivation quality is observed, which is attributed to hydrogen effusion.
Original language | English |
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Pages (from-to) | 203503/1-203503/4 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2011 |