Abstract
Contrary to conventional HWCVD, the power consumption in the iCVD process is dominated by heat
conduction rather than radiation. This is due to the fact that while the typical wire temperature for HWCVD is
about 1750–2200 °C, for iCVD the temperature is only 250–500 °C. Typical deposition pressures are in the
transition regime between the collision free regime, where the conduction is pressure dependent, and the
collision mediated regime, where the conduction is pressure independent. The power loss due to heat
conductivities of molecular nitrogen, glycidyl methacrylate (GMA) and tert-butylperoxide (TBPO) gases have
been determined experimentally for these pressure regimes. The necessary power input to the filaments can
be explained to be due to mainly heat dissipation by radiation and by gas conduction. This means that the
dissociation process requires only very little power, about 2% of the total power consumption in a typical
iCVD process.
| Original language | Undefined/Unknown |
|---|---|
| Pages (from-to) | 3555-3558 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 517 |
| Issue number | 12 |
| Publication status | Published - 2009 |