HBr-K2Cr2O7-H2O etching system for indium phosphide

J. L. Weyher*, R. Fornari, T. Görög, J. J. Kelly, B. Erné

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review


InP surfaces with (100), (111)In and (111)P orientations were etched with HBr-K2Cr2O2-H2O solutions. Etching could be diffusion-controlled (giving rise to polishing) or purely kinetically controlled (revealing crystallographic defects), depending on the solution composition. These experimental results have been summarized in a ternary diagram which allows a complete surface treatment of indium phosphide: uniform etching for the elimination of process damage, dislocation revealing and identification of polar 〈110〉 crystallographic orientations, elimination of surface oxides and surface preparation prior to further etching studies.

Original languageEnglish
Pages (from-to)57-67
Number of pages11
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 1 Aug 1994


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