Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO

Rong Zhang; Antimo Marrazzo; Matthieu Jean Verstraete; Nicola Marzari; Thibault Daniel Pierre Sohier

doi:10.1021/acs.nanolett.1c02322

Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO

Rong Zhang
, Antimo Marrazzo
, Matthieu Jean Verstraete
, Nicola Marzari
, Thibault Daniel Pierre Sohier^*

^*Corresponding author for this work

Swiss Federal Institute of Technology Lausanne
University of Trieste
University of Liege

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.

Original language	English
Pages (from-to)	7631-7636
Number of pages	6
Journal	Nano Letters
Volume	21
Issue number	18
DOIs	https://doi.org/10.1021/acs.nanolett.1c02322
Publication status	Published - 22 Sept 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
©

Funding

The results of this research have been partially achieved using the DECI resource ARCHER UK National Supercomputing Service with support from the PRACE aisbl. Simulation time was also awarded by PRACE (project id. 2020225411) on MareNostrum at Barcelona Supercomputing Center - Centro Nacional de Supercomputación (The Spanish National Supercomputing Center) and on MARCONI at CINECA Italy (project id. 2016163963). R.Z., A.M., N.M., and T.D.P.S. acknowledge support from NCCR MARVEL funded by the Swiss National Science Foundation, and R.Z. was supported by the NCCR MARVEL INSPIRE Potentials fellowship. T.D.P.S. acknowledges support from the University of Liege under the Special Funds for Research, IPD-STEMA Programme.

Funders
NCCR Neuro Center for Proteomics
University of Liege
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Keywords

2D materials
Density-functional theory
Field-effect
Spin-layer locking
Spintronics

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10.1021/acs.nanolett.1c02322

Cite this

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title = "Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO",

abstract = "A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 {\AA}-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.",

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doi = "10.1021/acs.nanolett.1c02322",

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AU - Zhang, Rong

AU - Marrazzo, Antimo

AU - Verstraete, Matthieu Jean

AU - Marzari, Nicola

AU - Sohier, Thibault Daniel Pierre

N1 - Publisher Copyright: ©

PY - 2021/9/22

Y1 - 2021/9/22

N2 - A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.

AB - A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.

KW - 2D materials

KW - Density-functional theory

KW - Field-effect

KW - Spin-layer locking

KW - Spintronics

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JO - Nano Letters

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ER -

Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO

Abstract

Bibliographical note

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Keywords

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