Gas phase conditions for obtaining device quality amorphous silicon at low temperature and high deposition rate

J.K. Rath, M.M. de Jong, A.D. Verkerk, M. Brinza, R.E.I. Schropp

Research output: Contribution to journal › Article › Academic › peer-review

Original language	Undefined/Unknown
Pages (from-to)	A22-04
Number of pages	19
Journal	Materials Research Society symposia proceedings
Volume	1153
Publication status	Published - 2009

Cite this

@article{39b41389db4a48599239e2894d8af80a,

title = "Gas phase conditions for obtaining device quality amorphous silicon at low temperature and high deposition rate",

author = "J.K. Rath and {de Jong}, M.M. and A.D. Verkerk and M. Brinza and R.E.I. Schropp",

year = "2009",

language = "Undefined/Unknown",

volume = "1153",

pages = "A22--04",

journal = "Materials Research Society symposia proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Gas phase conditions for obtaining device quality amorphous silicon at low temperature and high deposition rate

AU - Rath, J.K.

AU - de Jong, M.M.

AU - Verkerk, A.D.

AU - Brinza, M.

AU - Schropp, R.E.I.

PY - 2009

Y1 - 2009

M3 - Article

SN - 0272-9172

VL - 1153

SP - A22-04

JO - Materials Research Society symposia proceedings

JF - Materials Research Society symposia proceedings

ER -