Abstract
The results of a two-dimensional fluid model for argon rf discharges in
a closed cylindrical vacuum chamber are compared with experimental data
from an amorphous silicon deposition reactor. Good agreement is obtained
for the relation between the dc autobias voltage and the dissipated
power in the frequency range 50-100 MHz at pressures between 12 and 90
Pa. A scaling law is presented for the relation between the power, the
dc bias voltage, the rf excitation frequency, and the background
pressure. The model yields a linear relation between the applied rf
voltage and the dc bias voltage. This relation depends only on the
geometry of the discharge chamber and shows an offset.
| Original language | English |
|---|---|
| Pages (from-to) | 1780-1782 |
| Journal | Applied Physics Letters |
| Volume | 64 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 1 Apr 1994 |
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