Abstract
We construct a three-dimensional second-order topological insulator with gapless helical hinge states from an array of weakly tunnel-coupled Rashba nanowires. For suitably chosen interwire tunnelings, we demonstrate that the system has a fully gapped bulk as well as fully gapped surfaces, but hosts a Kramers pair of gapless helical hinge states propagating along a path of hinges that is determined by the hierarchy of interwire tunnelings and the boundary termination of the system. Furthermore, the coupled-wires approach allows us to incorporate electron-electron interactions into our description. At suitable filling factors of the individual wires, we show that sufficiently strong electron-electron interactions can drive the system into a fractional second-order topological insulator phase with hinge states carrying only a fraction e/p of the electronic charge e for an odd integer p.
Original language | English |
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Article number | 045409 |
Number of pages | 10 |
Journal | Physical Review B |
Volume | 107 |
Issue number | 4 |
DOIs | |
Publication status | Published - 15 Jan 2023 |
Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by the Swiss National Science Foundation and NCCR QSIT. This project received funding from the European Union's Horizon 2020 research and innovation program (ERC Starting Grant, Grant No. 757725).
Publisher Copyright:
© 2023 American Physical Society.