Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness

J. Groenewold; Mark van de Kerkhof

doi:10.1117/12.3066035

Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness

J. Groenewold^*
, Mark van de Kerkhof

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

For EUV lithography the line edge roughness is a critical feature for successful patterning. Conditions to minimize line edge roughness stemming from photon, conversion and deprotection stochasticity [1], and molecular interactions [5] have been undertaken. The premise in [1] has been that increasing dose, and simultaneously the amount of base quencher would decrease the line edge roughness. This expectation has not materialized thus far [4]. Here a novel source of stochasticity underlying the line edge roughness is hypothesized and made plausible by modelling. In particular, the formation of a dissolution resistant top layer is discussed and the consequences for the line edge roughness are outlined.

Original language	English
Title of host publication	40th European Mask and Lithography Conference, EMLC 2025
Editors	Jo Finders, Ines Stolberg
Publisher	SPIE
ISBN (Electronic)	9781510694538
DOIs	https://doi.org/10.1117/12.3066035
Publication status	Published - 23 Sept 2025
Event	40th European Mask and Lithography Conference, EMLC 2025 - Dresden, Germany Duration: 16 Jun 2025 → 18 Jun 2025

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	13787
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	40th European Mask and Lithography Conference, EMLC 2025
Country/Territory	Germany
City	Dresden
Period	16/06/25 → 18/06/25

Bibliographical note

Publisher Copyright:
© 2025 SPIE.

Keywords

CAR resist
development
EUV
inhibition layer
line edge roughness
shot noise
surface segregation

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10.1117/12.3066035

Cite this

Groenewold, J., & van de Kerkhof, M. (2025). Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness. In J. Finders, & I. Stolberg (Eds.), 40th European Mask and Lithography Conference, EMLC 2025 Article 1378719 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13787). SPIE. https://doi.org/10.1117/12.3066035

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title = "Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness",

abstract = "For EUV lithography the line edge roughness is a critical feature for successful patterning. Conditions to minimize line edge roughness stemming from photon, conversion and deprotection stochasticity [1], and molecular interactions [5] have been undertaken. The premise in [1] has been that increasing dose, and simultaneously the amount of base quencher would decrease the line edge roughness. This expectation has not materialized thus far [4]. Here a novel source of stochasticity underlying the line edge roughness is hypothesized and made plausible by modelling. In particular, the formation of a dissolution resistant top layer is discussed and the consequences for the line edge roughness are outlined.",

keywords = "CAR resist, development, EUV, inhibition layer, line edge roughness, shot noise, surface segregation",

author = "J. Groenewold and \{van de Kerkhof\}, Mark",

note = "Publisher Copyright: {\textcopyright} 2025 SPIE.; 40th European Mask and Lithography Conference, EMLC 2025 ; Conference date: 16-06-2025 Through 18-06-2025",

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doi = "10.1117/12.3066035",

language = "English",

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Groenewold, J & van de Kerkhof, M 2025, Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness. in J Finders & I Stolberg (eds), 40th European Mask and Lithography Conference, EMLC 2025., 1378719, Proceedings of SPIE - The International Society for Optical Engineering, vol. 13787, SPIE, 40th European Mask and Lithography Conference, EMLC 2025, Dresden, Germany, 16/06/25. https://doi.org/10.1117/12.3066035

Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness. / Groenewold, J.; van de Kerkhof, Mark.
40th European Mask and Lithography Conference, EMLC 2025. ed. / Jo Finders; Ines Stolberg. SPIE, 2025. 1378719 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13787).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness

AU - Groenewold, J.

AU - van de Kerkhof, Mark

PY - 2025/9/23

Y1 - 2025/9/23

N2 - For EUV lithography the line edge roughness is a critical feature for successful patterning. Conditions to minimize line edge roughness stemming from photon, conversion and deprotection stochasticity [1], and molecular interactions [5] have been undertaken. The premise in [1] has been that increasing dose, and simultaneously the amount of base quencher would decrease the line edge roughness. This expectation has not materialized thus far [4]. Here a novel source of stochasticity underlying the line edge roughness is hypothesized and made plausible by modelling. In particular, the formation of a dissolution resistant top layer is discussed and the consequences for the line edge roughness are outlined.

AB - For EUV lithography the line edge roughness is a critical feature for successful patterning. Conditions to minimize line edge roughness stemming from photon, conversion and deprotection stochasticity [1], and molecular interactions [5] have been undertaken. The premise in [1] has been that increasing dose, and simultaneously the amount of base quencher would decrease the line edge roughness. This expectation has not materialized thus far [4]. Here a novel source of stochasticity underlying the line edge roughness is hypothesized and made plausible by modelling. In particular, the formation of a dissolution resistant top layer is discussed and the consequences for the line edge roughness are outlined.

KW - CAR resist

KW - development

KW - EUV

KW - inhibition layer

KW - line edge roughness

KW - shot noise

KW - surface segregation

UR - https://www.scopus.com/pages/publications/105024956123

U2 - 10.1117/12.3066035

DO - 10.1117/12.3066035

M3 - Conference contribution

AN - SCOPUS:105024956123

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - 40th European Mask and Lithography Conference, EMLC 2025

A2 - Finders, Jo

A2 - Stolberg, Ines

PB - SPIE

T2 - 40th European Mask and Lithography Conference, EMLC 2025

Y2 - 16 June 2025 through 18 June 2025

ER -

Formation of dissolution resistant top layer in EUV-CAR resist and possible impact on line edge roughness

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Keywords

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