TY - JOUR
T1 - Evolution of arsenic in high fluence plasma immersion ion implanted silicon
T2 - Behavior of the as-implanted surface
AU - Vishwanath, V.
AU - Demenev, E.
AU - Giubertoni, D.
AU - Vanzetti, L.
AU - Koh, A. L.
AU - Steinhauser, G.
AU - Pepponi, G.
AU - Bersani, M.
AU - Meirer, F.
AU - Foad, M. A.
PY - 2015/11/15
Y1 - 2015/11/15
N2 - High fluence (>1015 ions/cm2) low-energy (3
+ on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As2O3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.
AB - High fluence (>1015 ions/cm2) low-energy (3
+ on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As2O3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.
KW - Arsenic
KW - Arsenic implantation
KW - As-implanted silicon
KW - Enhanced oxidation
KW - Plasma immersion ion implantation (PIII)
UR - http://www.scopus.com/inward/record.url?scp=84944339037&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2015.07.068
DO - 10.1016/j.apsusc.2015.07.068
M3 - Article
AN - SCOPUS:84944339037
SN - 0169-4332
VL - 355
SP - 792
EP - 799
JO - Applied Surface Science
JF - Applied Surface Science
ER -