Enhanced near-infrared response of a Si:H solar cells with β-NaYF4:Yb3+(18%), Er3+(2%) upconversion phosphors

J. de Wild; A. Meijerink; J.K. Rath; W.G.J.H.M. van Sark; R.E.I. Schropp

doi:10.1016/j.solmat.2015.04.020

Enhanced near-infrared response of a Si:H solar cells with β-NaYF4:Yb3+(18%), Er3+(2%) upconversion phosphors

J. de Wild, A. Meijerink, J.K. Rath, W.G.J.H.M. van Sark, R.E.I. Schropp

Research output: Contribution to journal › Article › Academic

Abstract

A near-infrared to visible upconversion phosphor (β-NaYF4:Yb3+ (18%), Er3+ (2%)) has been applied at the back of a thin film hydrogenated amorphous silicon (a-Si:H) solar cell in combination with a white back reflector to investigate its response to sub-bandgap infrared irradiation. Current–voltage measurements were performed on the solar cells. A maximum current enhancement of 6.2 μA was measured on illumination with a 980 nm diode laser at 28 mW. This corresponds to an external quantum efficiency (EQE) of 0.03% of the solar cell. A small part, 0.01%, was due to the direct absorption of sub-bandgap radiation but the larger part originates from upconversion. These experiments constitute a proof-of-principle for the utilization of photon upconversion in thin film solar cells. A close match between the non-linear behavior of the upconversion material and the EQE was found by varying the intensity of the laser light

Original language	English
Pages (from-to)	2395-2398
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	94
DOIs	https://doi.org/10.1016/j.solmat.2015.04.020
Publication status	Published - 2010

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@article{7d527c85bea74383ba2fc27bb529f699,

title = "Enhanced near-infrared response of a Si:H solar cells with β-NaYF4:Yb3+(18%), Er3+(2%) upconversion phosphors",

abstract = "A near-infrared to visible upconversion phosphor (β-NaYF4:Yb3+ (18%), Er3+ (2%)) has been applied at the back of a thin film hydrogenated amorphous silicon (a-Si:H) solar cell in combination with a white back reflector to investigate its response to sub-bandgap infrared irradiation. Current–voltage measurements were performed on the solar cells. A maximum current enhancement of 6.2 μA was measured on illumination with a 980 nm diode laser at 28 mW. This corresponds to an external quantum efficiency (EQE) of 0.03% of the solar cell. A small part, 0.01%, was due to the direct absorption of sub-bandgap radiation but the larger part originates from upconversion. These experiments constitute a proof-of-principle for the utilization of photon upconversion in thin film solar cells. A close match between the non-linear behavior of the upconversion material and the EQE was found by varying the intensity of the laser light",

author = "{de Wild}, J. and A. Meijerink and J.K. Rath and {van Sark}, W.G.J.H.M. and R.E.I. Schropp",

year = "2010",

doi = "10.1016/j.solmat.2015.04.020",

language = "English",

volume = "94",

pages = "2395--2398",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Enhanced near-infrared response of a Si:H solar cells with β-NaYF4:Yb3+(18%), Er3+(2%) upconversion phosphors

AU - de Wild, J.

AU - Meijerink, A.

AU - Rath, J.K.

AU - van Sark, W.G.J.H.M.

AU - Schropp, R.E.I.

PY - 2010

Y1 - 2010

N2 - A near-infrared to visible upconversion phosphor (β-NaYF4:Yb3+ (18%), Er3+ (2%)) has been applied at the back of a thin film hydrogenated amorphous silicon (a-Si:H) solar cell in combination with a white back reflector to investigate its response to sub-bandgap infrared irradiation. Current–voltage measurements were performed on the solar cells. A maximum current enhancement of 6.2 μA was measured on illumination with a 980 nm diode laser at 28 mW. This corresponds to an external quantum efficiency (EQE) of 0.03% of the solar cell. A small part, 0.01%, was due to the direct absorption of sub-bandgap radiation but the larger part originates from upconversion. These experiments constitute a proof-of-principle for the utilization of photon upconversion in thin film solar cells. A close match between the non-linear behavior of the upconversion material and the EQE was found by varying the intensity of the laser light

AB - A near-infrared to visible upconversion phosphor (β-NaYF4:Yb3+ (18%), Er3+ (2%)) has been applied at the back of a thin film hydrogenated amorphous silicon (a-Si:H) solar cell in combination with a white back reflector to investigate its response to sub-bandgap infrared irradiation. Current–voltage measurements were performed on the solar cells. A maximum current enhancement of 6.2 μA was measured on illumination with a 980 nm diode laser at 28 mW. This corresponds to an external quantum efficiency (EQE) of 0.03% of the solar cell. A small part, 0.01%, was due to the direct absorption of sub-bandgap radiation but the larger part originates from upconversion. These experiments constitute a proof-of-principle for the utilization of photon upconversion in thin film solar cells. A close match between the non-linear behavior of the upconversion material and the EQE was found by varying the intensity of the laser light

U2 - 10.1016/j.solmat.2015.04.020

DO - 10.1016/j.solmat.2015.04.020

M3 - Article

SN - 0927-0248

VL - 94

SP - 2395

EP - 2398

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Enhanced near-infrared response of a Si:H solar cells with β-NaYF4:Yb3+(18%), Er3+(2%) upconversion phosphors

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